JPH0352434B2 - - Google Patents

Info

Publication number
JPH0352434B2
JPH0352434B2 JP23164185A JP23164185A JPH0352434B2 JP H0352434 B2 JPH0352434 B2 JP H0352434B2 JP 23164185 A JP23164185 A JP 23164185A JP 23164185 A JP23164185 A JP 23164185A JP H0352434 B2 JPH0352434 B2 JP H0352434B2
Authority
JP
Japan
Prior art keywords
cell
shutter
raw material
beam epitaxy
molecular beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP23164185A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6291492A (ja
Inventor
Yoshiharu Tashiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP23164185A priority Critical patent/JPS6291492A/ja
Publication of JPS6291492A publication Critical patent/JPS6291492A/ja
Publication of JPH0352434B2 publication Critical patent/JPH0352434B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP23164185A 1985-10-16 1985-10-16 分子線エピタキシ−装置 Granted JPS6291492A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23164185A JPS6291492A (ja) 1985-10-16 1985-10-16 分子線エピタキシ−装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23164185A JPS6291492A (ja) 1985-10-16 1985-10-16 分子線エピタキシ−装置

Publications (2)

Publication Number Publication Date
JPS6291492A JPS6291492A (ja) 1987-04-25
JPH0352434B2 true JPH0352434B2 (en]) 1991-08-09

Family

ID=16926679

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23164185A Granted JPS6291492A (ja) 1985-10-16 1985-10-16 分子線エピタキシ−装置

Country Status (1)

Country Link
JP (1) JPS6291492A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
USH2193H1 (en) * 2001-01-30 2007-07-03 The United States Of America As Represented By The Secretary Of The Air Force Method of growing homoepitaxial silicon carbide

Also Published As

Publication number Publication date
JPS6291492A (ja) 1987-04-25

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